LIFT-OFF PATTERNING OF SPUTTERED SIO₂ FILMSSERIKAWA T; YACHI T.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 918-919; BIBL. 7 REF.Article

Structure of Ti/SiO₂ thin multilayers sputtered in argon-hydrogen mixtures = Structure de couches minces multiples pulvérisées dans des mélanges argon-hydrogèneYACHI, T.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 5, pp 1955-1958, issn 0734-2101Article

TiSi₂/n⁺ poly-Si gate electrode patterning by plasma etching using CF₂Cl₂O₂YACHI, T.Journal of the Electrochemical Society. 1984, Vol 131, Num 5, pp 1217-1218, issn 0013-4651Article

ELECTRICAL DAMAGE IN MOS DEVICES BY RF DIODE SPUTTERED ALUMINIUM METALLIZATIONSERIKAWA T; YACHI T.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 882-885; BIBL. 14 REF.Article

A NEW MOS INTEGRATED CIRCUIT FABRICATION USING SI₃N₄ FILM SELF-ALIGNMENT LIFTOFF TECHNIQUESYACHI T; YAMAUCHI N.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 243-247; BIBL. 11 REF.Article

EFFECT OF HYDROGEN-ARGON MIXING FOR SPUTTERED ALUMINUM METALLIZATION ON MOS DEVICES = EFFET D'UN MELANGE D'HYDROGENE A L'ARGON DANS LA METALLISATION DE COMPOSANTS MOS AVEC DE L'ALUMINIUM DEPOSE PAR PULVERISATION CATHODIQUESERIKAWA T; YACHI T.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1187-1189; BIBL. 13 REF.Article

Structure of Si/SiO₂ thin multilayers sputtered in argon-hydrogen mixturesYACHI, T.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 2, pp 159-161, issn 0734-2101, 3 p.Article

Formation of a TiSi₂/n⁺ poly-Si layer by rapid lamp heating and its application to MOS devicesYACHI, T.IEEE electron device letters. 1984, Vol 5, Num 7, pp 217-220, issn 0741-3106Article

Magnetron-sputtered SiO₂ films in hydrogen-argon mixturesSERIKAWA, T; YACHI, T.Journal of the Electrochemical Society. 1984, Vol 131, Num 9, pp 2105-2109, issn 0013-4651Article

Use of TiSi₂ to form metal-oxide-silicon field effect transistors with self-aligned source/drain and gate electrodeYACHI, T; SUYAMA, S.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 4, pp 992-996, issn 0734-211XArticle

Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristicsSAKAI, T; YACHI, T.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 6, pp 1510-1515, issn 0018-9383Article

Effect of buried oxide thickness in a thin-film silicon on insulator power metal-oxide-semiconductor field-effect transistorMATSUMOTO, S; YACHI, T.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3438-3442, issn 0021-4922, 1Article

Dependences of magnetron-sputtered SiO₂ film properties on argon pressureYACHI, T; SERIKAWA, T.Journal of the Electrochemical Society. 1984, Vol 131, Num 11, pp 2720-2722, issn 0013-4651Article

Synthesis of chiral epichlorhydrin monomers and effects of monomer chirality, solvent, and initiator concentration on the oligomerizationMIYASAKA, T; YACHI, T.Kobunshi ronbunshu (Tokyo). 1993, Vol 50, Num 9, pp 693-698, issn 0386-2186Article

Lift-off patterning of sputtered SiO₂ films (LOPAS) and its application to recessed field isolationYACHI, T; SERIKAWA, T.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2775-2778, issn 0013-4651Article

A new method utilizing To-silicide oxidation for the fabrication of a MOSFET with a self-aligned Schottky source/drainYACHI, T; SUYAMA, S.IEEE electron device letters. 1983, Vol 4, Num 8, pp 277-279, issn 0741-3106Article

Co-based amorphous core of transformer used for high power switching regulatorMINO, M; YACHI, T; OHASHI, Y et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1990, Vol 73, Num 9, pp 1468-1472, issn 0387-236XArticle

Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diodeYAMASHITA, N; MURAKAMI, N; YACHI, T et al.IEEE transactions on power electronics. 1998, Vol 13, Num 4, pp 667-673, issn 0885-8993Article

A board-mounted power supply module using a new low power dissipation-control ICYAMASHITA, N; TSUKAMOTO, K; YACHI, T et al.IEEE transactions on power electronics. 1993, Vol 8, Num 4, pp 362-367, issn 0885-8993Conference Paper

Effect of pre-annealing in preventing gate oxide breakdown voltage degradation induced by polysilicon gate dilineation using ion millingYAMAUCHI, N; YACHI, T; WADA, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 539-540, issn 0021-4922Article

A pattern edge profile simulation for oblique ion millingYAMAUCHI, N; YACHI, T; WADA, T et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 4, pp 1552-1557, issn 0734-2101Article

A new self-aligned well-isolation technique for CMOS devicesSUYAMA, S; YACHI, T; SERIKAWA, T et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 11, pp 1672-1677, issn 0018-9383Article

A new trench fabrication technique for silicon sunstrate utilizing undercutting and selective etchingSUYAMA, S; YACHI, T; SERIKAWA, T et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1985, Vol 3, Num 3, pp 905-908, issn 0734-211XArticle

Dry Liftoff method by sublimation of molybdenum oxideYAMAUCHI, N; YACHI, T; WADA, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 9, pp L595-L596, issn 0021-4922Article

A control IC for low-output-voltage high-efficiency switching convertersSAKAI, T; TSUKAMOTO, K; SERADA, T et al.NTT review. 1999, Vol 11, Num 1, pp 145-149, issn 0915-2334Article